1. Crystallography and Material Principles of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic compound composed of silicon and carbon atoms in a 1:1 stoichiometric ratio, differentiated by its remarkable polymorphism– over 250 well-known polytypes– all sharing solid directional covalent bonds yet varying in stacking series of Si-C bilayers.
The most technologically appropriate polytypes are 3C-SiC (cubic zinc blende structure), and the hexagonal kinds 4H-SiC and 6H-SiC, each displaying subtle variants in bandgap, electron flexibility, and thermal conductivity that affect their viability for details applications.
The toughness of the Si– C bond, with a bond power of approximately 318 kJ/mol, underpins SiC’s remarkable firmness (Mohs firmness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical degradation and thermal shock.
In ceramic plates, the polytype is normally selected based on the planned use: 6H-SiC prevails in architectural applications because of its convenience of synthesis, while 4H-SiC controls in high-power electronic devices for its remarkable charge provider flexibility.
The wide bandgap (2.9– 3.3 eV depending on polytype) likewise makes SiC an excellent electrical insulator in its pure type, though it can be doped to function as a semiconductor in specialized electronic tools.
1.2 Microstructure and Stage Purity in Ceramic Plates
The efficiency of silicon carbide ceramic plates is critically depending on microstructural features such as grain dimension, density, stage homogeneity, and the existence of additional phases or pollutants.
High-grade plates are usually made from submicron or nanoscale SiC powders with innovative sintering methods, resulting in fine-grained, completely dense microstructures that optimize mechanical toughness and thermal conductivity.
Impurities such as free carbon, silica (SiO ₂), or sintering help like boron or aluminum have to be carefully regulated, as they can create intergranular movies that reduce high-temperature stamina and oxidation resistance.
Residual porosity, also at low degrees (
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