1. Product Science and Structural Integrity
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms set up in a tetrahedral latticework, mostly in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting phenomenal atomic bond strength.
The Si– C bond, with a bond power of approximately 318 kJ/mol, is amongst the best in architectural ceramics, providing impressive thermal stability, solidity, and resistance to chemical attack.
This durable covalent network results in a material with a melting point exceeding 2700 ° C(sublimes), making it among one of the most refractory non-oxide porcelains available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC preserves mechanical strength and creep resistance at temperature levels above 1400 ° C, where numerous metals and standard ceramics begin to soften or deteriorate.
Its low coefficient of thermal expansion (~ 4.0 × 10 ⁻⁶/ K) combined with high thermal conductivity (80– 120 W/(m · K)) makes it possible for quick thermal biking without devastating breaking, a crucial quality for crucible performance.
These intrinsic buildings come from the balanced electronegativity and similar atomic dimensions of silicon and carbon, which promote an extremely stable and densely loaded crystal framework.
1.2 Microstructure and Mechanical Resilience
Silicon carbide crucibles are commonly produced from sintered or reaction-bonded SiC powders, with microstructure playing a definitive role in resilience and thermal shock resistance.
Sintered SiC crucibles are produced through solid-state or liquid-phase sintering at temperature levels above 2000 ° C, usually with boron or carbon ingredients to enhance densification and grain limit communication.
This procedure generates a totally dense, fine-grained framework with marginal porosity (
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